R. W. Bower and H. G. Dill INSULATED GATE FIELD EFFECT TRANSISTORS FABRICATED USING THE GATE AS SOURCE-DRAIN MASK, Paper 16.6 International Electron Device Meeting, Washington, D.C., 1966.
R. W. Bower, DEVICE CONSIDERATIONS AND APPLICATIONS – Ion Implantation in Semiconductors, Academic Press, Chapter 6, pp. 224-249, 1970.
R. W. Bower, T. A. Zimmerman and A. M. Mohsen. A HIGH DENSITY OVERLAPPING GATE CHARGE COUPLED DEVICE ARRAY Paper 2.6, IEEE International Electron Devices Meeting, Oct. 1973.
R. W. Bower. CHARACTERISTICS OF ALUMINUM-TITANIUM ELECTRICAL CONTACTS ON SILICON. Appl. Phys. Lett., Vol. 23, No. 2, pp. 99-101, 1973
A. M. Mohsen, R. W. Bower, and T. C. McGill. ‘Overlapping-Gate Buried-Channel Charge-Coupled Devices’, Electronics Letters, Vol. 9, No. 17, pp. 396-398. 1974.
R. W. Bower, M. S. Ismail and S. N. Farrens. “Aligned Wafer Bonding: A Key to Three-Dimensional Microstructures”, Journal of Electronics Materials, Vol. 20, No. 5, pp. 383-387. June 1991.
R. W. Bower, M. S. Ismail and B. E. Roberds, ‘Low Temperature Si3N4 Direct Bonding’. Published in Appl. Phys. Lett., 28 June 1993 pp. 2485-3487
Selected Patents
R. W. Bower. FIELD-EFFECT DEVICE WITH INSULATED GATE. Patent, U.S. 3,472,712, issued October 14, 1969. (This is the basic patent describing the self aligned-gate MOSFET)
R. W. Bower. ASYMMETRICAL WELL CHARGE COUPLED DEVICE. Patent U.S. 3,967,306, issued June 29, 1975.
R. W. Bower and M. S. Ismail. ALIGNED WAFER BONDING. Patent U.S. 5,236,118, filed May 12, 1992 issued August 17, 1993.
R. W. Bower and M. S. Ismail. NITROGEN BASED LOW TEMPERATURE DIRECT BONDING. filed June 23, 1992, Issued April 2, 1996, patent U. S. 5,503,704
Robert W. Bower, Smooth Thin Film Layers Produced by Low Temperature Hydrogen Ion Cut, U.S. Patent 7,094,667 B1, filed May 5, 2003, issued Aug. 22, 2006
