Publications

Publications

Invited review / article

  1. “Recent development in power electronic devices using GaN and Diamond” (in preparation), Srabanti Chowdhury, ECS Transactions, September-October 2015
  2. “Low-Loss Power Conversion Enabled By Gallium Nitride Based Devices”, Srabanti Chowdhury, Wide Bandgap Semiconductor Materials and Devices 16, ECS Transactions Volume 66, May 2015
  3. “Gallium Nitride based power switches for next generation of power conversion”, Srabanti Chowdhury, Topical Review paper– special edition celebrating Nobel Prize in Physics for physica status solidi authors Isamu Akasaki, Hiroshi Amano and Shuji Nakamura, Status Solidi A. doi: 10.1002/pssa.201431810.
  4. “GaN electronics for next generation cars”, Srabanti Chowdhury, Introduction to Special Edition on the application of wide bandgap devices IEEE Transportation Electrification e-newsletter, October 2014
  5. “Lateral and Vertical transistors using the AlGaN/GaN heterostructure”, Srabanti Chowdhury and Umesh K Mishra, IEEE Transaction on Electron Devices, Volume 60, Issue 10, October 2013, Pages 3060-3066
  6. “Current status and scope of gallium nitride-based vertical transistors for high-power electronics application”, Srabanti Chowdhury, Brian L Swenson, Man Hoi Wong and Umesh K Mishra, Semiconductor Science and Technology Volume 28, Number 7, June 2013, 074014(8pages) Editorial pick for 2013

 

Contributed

  1. “Demonstration of Diamond Based High Voltage Schottky PIN Diodes with Very Low Forward Resistance, Maitreya Dutta, Franz A.M. Koeck, Raghuraj Hathwar, Stephen M. Goodnick, Robert J. Nemanich, and Srabanti Chowdhury (under review, IEEE EDL)
  2. “Design of a 1200V GaN vertical MOS transistor for power switching operation”, Wenwen Li and Srabanti Chowdhury, (under final review PSS)
  3. “The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor”, Riccardo Soligo, Srabanti Chowdhury, Geetak Gupta, Umesh Mishra, and Marco Saraniti, (accepted), Electron Device Letters, IEEE, 2015
  4. “Design of 1.2 kV Power Swiches With Low Ron With GaN-Based Vertical JFET,” Dong Ji, and Srabanti Chowdhury,  IEEE Transactions on Electron Device, August, 2015.
  5. “Dynamic Modeling and Power Loss Analysis of High Frequency Power Switches Based on GaN CAVET,” Dong Ji, Yuanzheng Yue, Jianyi Gao, and Srabanti Chowdhury, submitted to IEEE Transactions on Power Electronics.
  6. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction, Ramya Yeluri, Jing Lu, Christophe A. Hurni, David A. Browne, Srabanti Chowdhury, Stacia Keller, James S. Speck and Umesh K. Mishra, Phys. Lett. 106, 183502 (2015); http://dx.doi.org/10.1063/1.4919866
  7. “CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion”, Srabanti Chowdhury, Man Hoi Wong, Brian L Swenson and Umesh K. Mishra Electron Device Letters, IEEE Volume 33, Issue 1, January 2012 Pages: 41 – 43
  8. “Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers”, Srabanti Chowdhury, Brian L. Swenson, Jing Lu, and Umesh K. Mishra, Jpn. J. Appl. Phys Volume 50 October, 2011 Pages: 101002-101007
  9. “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon”, Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, Phys. Status Solidi C 8, No. 7–8, June 2011, Pages: 2086–2088,
  10. “Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions”, Luke Gordon, Mao-Sheng Miao, Srabanti Chowdhury, Masataka Higashiwaki, Umesh K Mishra and Chris G Van de Walle, J. Phys. D: Appl. Phys. Volume 4, December 2010, Pages: 505501- 505508
  11. “Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures”, Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson, and Umesh K. Mishra, Applied Physics Letters, Volume 97, Issue 22, October 2010, Pages: 3522649- 352265.
  12. “Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition”, S. Keller, Y. Dora, F. Wu, X. Chen, Chowdhury, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Applied Physics Letters, Volume 97, Issue 14, October 2010, Pages: 142109-142111
  13. “Distribution of donor states on etched surface of AlGaN/GaN hetrostructures”, Masataka Higashiwaki, Srabanti Chowdhury, Maosheng Miao, Brian L.Swenson, Chris G. Van de Walle and Umesh K. Mishra, Journal of Applied Physics, Volume 108, Issue 6, September 2010, Pages: 063719-1­­–063719-6
  14. “Enhancement and Depletion Mode AlGaN/GaN CAVET with Mg-Ion-Implanted GaN as Current Blocking Layer”, Srabanti Chowdhury, Brian L Swenson and Umesh K. Mishra, Electron Device Letters, IEEE Volume 29, Issue 6, June 2008 Pages: 543 – 545

 

Book Chapter

  • Springer Present and future power GaN devices – Materials, applications, reliability (Chapter 5): GaN-based vertical transistors (in preparation) Tentative publication date : June 2016
  • Handbook on GaN Semiconductor Materials and Devices, Taylor & Francis Group,
  • Tentative publication date : June 2016

 

Patents

  1. 01/16/14 – 20140015066 – Semiconductor electronic components with integrated current limiters
  2. 01/02/14 – 20140001557 – Semiconductor devices with integrated hole collectors
  3. 10/10/13 – 20130264578 – N-polar iii-nitride transistors
  4. 04/11/13 – 20130088280 – High power semiconductor electronic components with increased reliability
  5. 03/07/13 – 20130056744 – Semiconductor devices with guard rings
  6. 12/20/12 – 20120319127 – Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
  7. 06/21/12 – 20120153390 – Transistors with isolation regions

 

Patents filed since joining ASU

  1. “Tunnel Vertical FET using Nitrogen polar GaN”
  2. “GaN based vertical metal oxide semiconductor (MOS) and junction field effect transistors (JFET’s)”, Patents under filing process: 5,

Total patents: 14 (Issued + filed)

 

Conference Presentations (Invited)

  1. “Power Conversion with Gallium Nitride Devices”, SPIE Photonics West, San Francisco, 2016
  2. Wide bandgap and ultra wide bandgap devices for Power conversion, Material Research Outreach Symposium, UC Santa Barbara, California, Feb, 2016
  3. “Recent developments in power electronic devices using GaN and Diamond”, Fall 2015 ECS Symposium, Phoenix, October 2015
  4. “Low Loss Power Conversion Enabled By Gallium Nitride Based Devices”, 227th Electro Chemical Society meeting, Chicago, May, 2015
  5. “Gallium Nitride and other emerging semiconductors for next generation power conversion” Invited SSEL seminar at University of Michigan, Nov 24, 2014
  6. “GaN based power electronic devices for next generation power conversion”, The International Workshop on Nitride Semiconductors (IWN), 2014, Poland
  7. “GaN based devices offers efficient power conversion for the next generation automotive application”, IEEE Lecture series – Transportation Electrification, ASU, April 2014
  8. “GaN switches offer the next generation power conversion solution”, International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, December 2013
  9. “Current Status of GaN-based Power Electronic Devices and their Fabrication Challenges”, Plasma-Therm Symposium, Stanford, September, 2013
  10. “Lateral and Vertical Power Devices in Gallium Nitride”, Topical Workshop on Heterostructure Microelectronics (TWHM), Gifu, Japan, 2011

 

Conference Presentations (Contributed)

  1. “A Comprehensive Study of the Design Space to Achieve 1.2kV GaN-based Vertical JFET with Low Ron”, Dong Ji and Srabanti Chowdhury, accepted for oral presentation, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015
  2. “Design of a 1.2kV GaN MOSVFET for Single Chip Normally-off Operation”, Wenwen Li and Srabanti Chowdhury, accepted for oral presentation, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015
  3. “High Temperature Contacts to p-GaN and n-GaN for Topping InGaN Photovoltaic Devices”, Shirong Zhao, Heather McFavilen, Shuo Wang, Fernando Ponce, Chantal Arena, Stephen Goodnick and Srabanti Chowdhury, accepted for oral presentation, Electronic Materials Conference (EMC), Columbus, Ohio, USA, 2015
  4. GaN-based vertical devices for power switching application”, Srabanti Chowdhury, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015
  5. Design of a 1.2 kV GaN-based MOS vertical transistor for single chip normally-off operation, Wenwen Li and Srabanti Chowdhury, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”
  6. Development of Low-Resistance Contacts to Phosphorus Doped Diamond”, Maitreya Dutta, Franz A.M. Koeck, Raghuraj Hathwar, Saptarshi Mandal, Stephen M. Goodnick, Robert J. Nemanich, and Srabanti Chowdhury, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”
  7. “First demonstration of high performance 1kV AlGaN/GaN HEMTs on Si and their use in the drive of both an induction motor and a permanent magnet motor”, Srabanti Chowdhury, Don Kebort, Jesus Magadia, Dietrich Graumann, Nick Fichtenbaum, Jim Honea, Yifeng Wu, Primit Parikh and Umesh K Mishra, The International Workshop on Nitride Semiconductors (IWN), Sapporo Japan, 2012
  8. “Study of Thermal Oxidation Effects on Surface Barrier Height of AlGaN/GaN Heterostructures”, Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
  9. “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon”, Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
  10. “Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer”, Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, Device Research Conference (DRC), South Bend, Indiana, USA, 2010
  11. “Low on resistance AlGaN/GaN Current Aperture Vertical Electron Transistors achieved with MBE regrown channels to suppress Mg diffusion from Current Blocking Layers”, Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Takamatsu, Japan, 2010
  12. “Estimation of surface barrier height of etched AlGaN barrier in AlGaN/GaN heterostructures”, Srabanti Chowdhury, Masataka Higashiwaki, Maosheng Miao, Brian L. Swenson, Chris G. Van de Walle, and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, 2009
  13. “Investigation of Mg Ion-Implanted GaN as Current Blocking Layer in a CAVET”, Srabanti Chowdhury, Brian L. Swenson, Stacia Keller and Umesh K. Mishra, Electronic Materials Conference (EMC), Penn State, USA, 2009
  14. “AlGaN/GaN HEMT and CAVET for high voltage switching application”, Srabanti Chowdhury, Brian L. Swenson, Chang Soo Suh, Yuvaraj Dora, Stacia Keller and Umesh K. Mishra, Government Microcircuit Applications and critical technology conference (GOMACTech), Orlando, USA, 2009
  15. “AlGaN/GaN CAVET on GaN Substrates with Al Ion Implanted Current Blocking Layer”, Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Montreux, Switzerland, 2008
  16. “Depletion and Enhancement mode AlGaN/GaN CAVET with Al ion implanted current blocking layer”, Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars, and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Rust, Germany, 2008
  17. “Depletion and Enhancement mode AlGaN/ GaN CAVET”, Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, Electronic Materials Conference (EMC), Santa Barbara, USA, 2008
  18. “Storage, Transmission and Recognition of alphabets and words with enhanced compression”, Kallol Bhattacharya, Srabanti Chowdhury, Shirsha Bhajan, Dipankar Biswas, and Krishnendu Goswami, International Conference on Computers and Devices for Communication (CODEC), Kolkata, India, 2004
  19. “Unique representation of a binary image through a set of numbers”, Srabanti Chowdhury, Shirsha Bhajan and D. Biswas, Horizons of Telecommunication (HOT), Kolkata, India, 2003

 

Project Reviews

  • Project review presentation on recent progress in CAVET with MBE regrown channel, Toyota Headquarters, Nagoya, Japan, January and July 2010
  • ATLAS simulation of HEMT with InGaN back-barrier, Millimeter-wave Initiative for Nitride Electronics (MINE) review, UCSB, California, 2006

 

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